The secondary electrons emitted from the target surface, under the combined action of the electric field force and the magnetic field force that are perpendicular to each other, make a spinning wheel linear jump across the magnetic field line along the runway, and circle along the runway in this form, increasing the chance of collision with gas atoms. It overcomes the disadvantages of two pole and three pole sputtering.
The secondary electron cycle movement with low energy increases the chance that each electron ionizes the atom. Only after the energy of the electron is exhausted can it leave the target surface and fall on the anode. The reason for low substrate temperature rise and small damage.
The high-density plasma is bound near the target surface by the electromagnetic field and does not contact the substrate.
The working pressure can be reduced to the order of 10-1 ～ 10-2Pa by improving the ionization efficiency; So as to reduce the scattering effect of the working gas on the sputtered atoms, improve the deposition rate and increase the firmness of the film.
When magnetron sputtering is performed, the collision probability between electrons and gas atoms is high, so the gas ionization rate is greatly increased.
Low temperature sputtering: directly cooling the sputtered target material; The magnetic field is used to reduce the electron energy and the electron trap is used to eliminate the bombardment of electrons on the substrate.
High speed sputtering: try to increase the power input to the target; Improve the power efficiency of sputtering deposition; Reducing the back diffusion of sputtered atoms or molecules to the target.
